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Silicon Carbide

Silicon Carbide

Description:

Silicon carbide (SiC) is a compound composed of silicon (Si) and carbon (C) and is a wide bandgap semiconductor material. It has key properties such as high hardness, high thermal conductivity, high melting point and stable chemical properties.

Application:

Silicon carbide (SiC) is made by high temperature smelting in a resistance furnace with raw materials such as quartz sand, petroleum coke (or coal coke), wood chips (salt is needed to produce green silicon carbide). Silicon carbide is widely used in electronics, wear-resistant materials and ceramics due to its excellent physical and chemical properties.

 

Grit No.

P series: P12-P2500

F series:F12-F1200

Refractory & Deoxidizer Series : 0-1,0-10,1-3,1-5,1-10 mm

Other series: Japanese standard “12-“6000

American standard12″-1200*

 

Technical Data Sheet:

 

Abrasives

Grit Size

Chemical Composition(%)

SIC(min)

F.C(max)

Fe2O3(max)

silicon carbide

F12~F90

98.5

0.20

0.60

F100~F150

98.5

0.30

0.80

F180~F220

97.0

0.30

1.20

Refractory materials

 

 

 

0-1,0-10,1-3,1-10mm

88-90

0.30

 

 

0.80

 

200mesh,325mesh

98.0

0.30

1.50

 

 

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